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| CR05AS-8 Thyristor Low Power Use REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Features * IT (AV) : 0.5 A * VDRM : 400 V * IGT : 100 A * Non-Insulated Type * Planar Passivation Type Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK) 1 2 3 RENESAS Package code: PLZZ0004CB-A LZZ0004 Z (Package name: SOT-89) ) 2, 4 4 1 2 1. 2. 3. 4. Cathode Anode Gate Anode 4 3 3 1 Applications Solid state relay, strobe flasher, igniter, and hybrid IC Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 DC off-state voltageNote1 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 8 (Mark CD) 400 500 320 400 320 Unit V V V V V REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 1 of 8 CR05AS-8 Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Symbol IT (RMS) IT (AV) ITSM I2 t PGM PG (AV) VFGM VRGM IFGM Tj Tstg -- Ratings 0.79 0.5 10 0.4 0.1 0.01 6 6 0.1 - 40 to +125 - 40 to +125 50 Unit A A A A2s W W V V A C C mg Conditions Commercial frequency, sine half wave Note2 180 conduction, Ta = 57C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. With gate to cathode resistance RGK = 1 k. Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-a) Rated value Min. Typ. Max. -- -- 0.1 -- -- 0.1 -- -- 0.2 20 -- -- -- -- -- -- -- -- 1.9 0.8 -- 100Note3 3 70 Unit mA mA V V V A mA C/W Test conditions Tj = 125C, VRRM applied Tj = 125C, VDRM applied, RGK = 1 k Ta = 25C, ITM = 1.5 A, instantaneous value Tj = 25C, VD = 6 V, Note4 IT = 0.1 A Tj = 125C, VD = 1/2 VDRM, RGK = 1 k Tj = 25C, VD = 6 V, Note4 IT = 0.1 A Tj = 25C, VD = 12 V, RGK = 1 k Note2 Junction to ambient Notes: 2. Soldering with ceramic plate (25 mm x 25 mm x t0.7 mm). 3. If special values of IGT are required, choose item E from those listed in the table below if possible. Item B E IGT (A) 20 to 50 20 to 100 The above values do not include the current flowing through the 1 k resistance between the gate and cathode. 4. IGT, VGT measurement circuit. A1 IGS 3V DC A3 RGK 1 1k Switch IGT A2 2 V1 VGT TUT 6V DC 60 Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1k) REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 2 of 8 CR05AS-8 Performance Curves Maximum On-State Characteristics 102 7 Ta = 25C 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 0 1 2 3 4 5 10 Rated Surge On-State Current Surge On-State Current (A) 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) On-State Voltage (V) Conduction Time (Cycles at 60Hz) x 100 (%) Gate Characteristics 102 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -60 -40 -20 0 20 40 60 80 100 120 140 Typical Example Gate Voltage (V) 101 VFGM = 6V PG(AV) = 0.01W VGT = 0.8V PGM = 0.1W 100 IGT = 100A (Tj = 25C) VGD = 0.2V IFGM = 0.1A 10-1 10-2 10-2 2 3 5 710-12 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Gate Current (mA) Gate Trigger Current (Tj = tC) Gate Trigger Current (Tj = 25C) Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature 1.0 0.9 Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Distribution Typical Example Transient Thermal Impedance (C/W) Gate Trigger Voltage (V) 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 25x25xt0.7 5 Aluminum Board 3 2 102 7 5 3 2 101 7 5 3 2 100 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 0 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Time (s) REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 3 of 8 CR05AS-8 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) 160 Maximum Average Power Dissipation (Single-Phase Half Wave) 1.5 Average Power Dissipation (W) Ambient Temperature (C) = 30 60 90 120 180 1.0 25x25xt0.7 140 Aluminum Board 120 100 80 60 40 20 0 0 0.2 360 Resistive, inductive loads Natural convection 0.5 360 Resistive, inductive loads 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 = 30 60 90 180 120 0.4 0.6 0.8 Average On-State Current (A) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 Maximum Average Power Dissipation (Single-Phase Full Wave) Average Power Dissipation (W) 1.5 Ambient Temperature (C) 90 = 30 60 120 180 25x25xt0.7 140 Aluminum Board 120 100 80 60 40 20 0 0 360 Resistive loads Natural convection 1.0 0.5 60 = 30 0.2 0.4 120 90 0.6 360 Resistive loads 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 180 0.8 Average On-State Current (A) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 160 Maximum Average Power Dissipation (Rectangular Wave) Average Power Dissipation (W) 1.5 Ambient Temperature (C) 90 180 = 30 60 120 270 DC 25x25xt0.7 140 Aluminum Board 120 100 80 60 360 1.0 Resistive, inductive loads Natural convection 0.5 360 DC 40 20 0 0 0.2 = 30 60 120 90 0.4 270 180 0.6 0.8 0 0 Resistive, inductive loads 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Average On-State Current (A) REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 4 of 8 CR05AS-8 Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Gate to Cathode Resistance 120 100 80 60 40 20 0 10-1 2 3 5 7100 2 3 5 7101 2 3 5 7 102 x 100 (%) 160 140 120 100 x 100 (%) Typical Example Typical Example Tj = 125C RGK = 1k 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 Breakover Voltage (RGK = rk) Breakover Voltage (RGK = 1k) Breakover Voltage (Tj = tC) Breakover Voltage (Tj = 25C) Junction Temperature (C) Gate to Cathode Resistance (k) x 100 (%) Breakover Voltage vs. Rate of Rise of Off-State Voltage 120 100 80 60 40 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 Holding Current vs. Junction Temperature Tj = 25C IH (25C) = 1mA IGT(25C) = 25A Breakover Voltage (dv/dt = vV/s) Breakover Voltage (dv/dt = 1V/s) Holding Current (mA) Distribution Typical Example #2 #1 Typical Example 20 # 1 IGT(25C = 10A) # 2 IGT(25C = 66A) Tj = 125C, RGK = 1k 0 0 2 3 5 7101 2 3 5 7 102 2 3 5 7 10 3 10 10-1 -60 -40 -20 0 20 40 60 80 100 120 140 Rate of Rise of Off-State Voltage (V/s) Junction Temperature (C) x 100 (%) 500 x 100 (%) Holding Current vs. Gate to Cathode Resistance Typical Example IGT(25C) IH(1k) 13A 1.6mA #1 59A 1.8mA #2 #1 300 #2 200 Repetitive Peak Reverse Voltage vs. Junction Temperature 160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 400 100 0 10-1 2 3 5 7 100 2 3 5 7101 2 3 5 7102 Tj = 25C Repetitive Peak Reverse Voltage (Tj = tC) Repetitive Peak Reverse Voltage (Tj = 25C) Typical Example Holding Current (RGK = rk) Holding Current (RGK = 1k) Gate to Cathode Resistance (k) Junction Temperature (C) REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 5 of 8 CR05AS-8 Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 4 3 2 102 7 5 4 3 2 x 100 (%) #1 #2 Typical Example IGT(25C) #1 10A #2 66A Gate Trigger Current (tw) Gate Trigger Current (DC) Tj = 25C 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (s) REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 6 of 8 CR05AS-8 Package Dimensions Package Name UPAK JEITA Package Code SC-62 RENESAS Code PLZZ0004CA-A Previous Code UPAK / UPAKV MASS[Typ.] 0.050g Unit: mm 4.5 0.1 1.5 1.5 3.0 JEITA Package Code SC-62 RENESAS Code PLZZ0004CB-A Package Name SOT-89 0.8 Min 0.44 Max MASS[Typ.] 0.48g (0.4) 0.53 Max 0.48 Max (2.5) 1 2.5 0.1 4.25 Max 0.4 1.8 Max 1.5 0.1 0.44 Max (1.5) (0.2) Unit: mm 4.6Max 1.6 0.2 1.5 0.1 0 2.5 0 0.1 0.8M 0.8Min 0.58Max 3.0 0.48Max 4.2Max Max 1.5 0.4 -0.05 +0.03 REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 7 of 8 CR05AS-8 Order Code Lead form Surface-mounted type Standard packing Taping Quantity 4000 Standard order code Type name - ET +Direction (1 or 2) + 4 Standard order code example CR05AS-8-ET14 Note : Please confirm the specification about the shipping in detail. REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. 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